Professional Experience

• December 2018 - February 2021
Surface Scientist and Nanoscale Analyst
College of Engineering
Oregon State University, Corvallis OR
• July 2013 - November 2018
Research Scientist
Department of Materials Science and Engineering
University of Texas at Dallas, Richardson TX
• June 2010 - June 2013
Postdoctoral Research Physics
Physics Department
University of South Florida, Tampa FL
• November 2006 - March 2010
Research Assistant
Institut National Polytechnique de Lorraine (INPL, France) & Swiss Federal Laboratories for Materials Science and Technology (Empa, Switzerland)

Education

• 2010 PhD, Ecole national des Mines de Nancy, Institut National Polytechnique de Lorraine (France)
• 2006 MS, Aix-Marseille University, Marseille (France)
• 2004 BS, Mohamed First University, Oujda (Morocco)

Research Interests
• Nanomaterials: 2D layered materials, oxides, semiconductors, topological insulators.
• Device interfaces, integration and reliability
• Thin film technology

ORCID ID. 0000-0002-5454-0315

Researcher ID. C-8992-2013

Selected Publications

• Recombination kinetics and effects of superacid treatment in sulfur and selenium based transition metal dichalcogenides. 
M. Amani, R. Addou, G. H. Ahn, D. Kiriya, P Taheri, D.-H. Lien, J. W. Ager, R. M. Wallace, and Ali Javey. Nano Lett., 16 (4), 2786–2791 (2016)

• The Influence of Hydroxyls on Pd-Atom Mobility and Clustering on Rutile-TiO2(011)-2×1. R. Addou, T. P. Senftle , N. O'Connor, M. J. Janik , A. C.T. van Duin, and Matthias Batzill.
ACS Nano, 8 (6), 6321–6333 (2014)

• Growth of a two dimensional dielectric monolayer on quasi-freestanding graphene.
R. Addou, A. Dahal and M. Batzill.
Nature Nanotechnology 8, 41-45 (2013)

• Monolayer graphene growth on Ni(111) by low temperature chemical vapor deposition.
R. Addou, A. Dahal, P. Sutter and M. Batzill.
Appl. Phys. Lett. 100 021601 (2012)

• Structure Investigation of the (100) surface of the orthorhombic Al13Co4 crystal.
R. Addou, E. Gaudry, T. Deniozou, M. Heggen, M. Feuerbacher, P. Gille, R. Widmer, O. Groening, V. Fournée, Y. Grin, J. M. Dubois, and J. Ledieu.
Phys. Rev. B 80 014203 (2009)

Most Cited Publications

1. Defect-Dominated Doping and Contact Resistance in MoS2
S. McDonnell, R. Addou, C. Buie, R. M. Wallace, C. L. Hinkle.
ACS Nano, 8, 2880–2888 (2014)

649 citations

2. Near-Unity Photoluminescence Quantum Yield in MoS2.
M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. Madhvapathy, R. Addou, S. KC, M. Dubey, S.-C. Lee, Jr-H. He, J. Ager, X. Zhang, E. Yablonovitch, K. Cho, R. M. Wallace, A. Javey.
Science 350, 1065-1068 (2015)

517 citations

3. Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures
Y.-C. Lin, R. K. Ghosh, R. Addou, N. Lu, S. M. Eichfeld, H. Zhu, M.-Y. Li, X. Peng, M. J. Kim, L.-J. Li, R. M. Wallace, S. Datta, and J. A. Robinson
Nat. Commun., 6, 7311 (2015)

316 citation

4. Manganese Doping of Monolayer MoS2: The Substrate is Critical
K. Zhang, S. Feng, J. Wang, A. Azcatl, N. Lu, R. Addou, N. Wang, C. Zhou, J. Lerach, V. Bojan, M. J. Kim, L.-Q. Chen, R. M. Wallace, M. Terrones, J. Zhu and J. A. Robinson
Nano Lett., 15, 6586–6591 (2015)
312 citations

5. Surface defects on Natural MoS2. R. Addou

L. Colombo and R. M. Wallace

ACS Appl. Mater. Interfaces, 7, 11921-11929 (2015)

275 Citations